ORIGIN OF THE LINEAR AND NONLINEAR PIEZORESISTANCE EFFECTS IN PARA-TYPE SILICON

被引：36
|
作者：
SUZUKI, K
HASEGAWA, H
KANDA, Y
机构：
[1] KYOTO UNIV,DEPT PHYS,KYOTO 606,JAPAN
[2] HAMAMATSU UNIV,SCH MED,HAMAMATSU,SHIZUOKA 43131,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期
关键词：
D O I：
10.1143/JJAP.23.L871
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L871 / L874
页数：4
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