IONIZATION ENHANCED MIGRATION OF THE ISOLATED VACANCY IN PARA-TYPE SILICON

被引：0

作者：

CHATTERJEE, AP ^{[1
]}

WATKINS, GD ^{[1
]}

机构：

[1] LEHIGH UNIV,BETHLEHEM,PA 18015

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：325 / 325

页数：1

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