MEMORY ELEMENTS ON BASE OF VANADIUM-PHOSPHATE GLASS THIN-FILMS

被引:0
|
作者
KALYGINA, VM
GAMAN, VI
RYANNEL, EF
BOYARINTSEV, AI
机构
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:80 / 85
页数:6
相关论文
共 50 条
  • [21] PIEZORESISTIVE ELEMENTS OF POLYCRYSTALLINE SEMICONDUCTOR THIN-FILMS
    ONUMA, Y
    KAMIMURA, K
    HOMMA, Y
    [J]. SENSORS AND ACTUATORS, 1988, 13 (01): : 71 - 77
  • [22] COALESCENCE OF THIN-FILMS OF GOLD CONDENSED ON GLASS
    FRECHETTE, VD
    PULVER, JC
    ROSSINGTON, DR
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1981, 64 (08) : 463 - 468
  • [23] SWITCHING BEHAVIOR OF THIN-FILMS OF CHALCOGENIDE GLASS
    THOMAS, CB
    BOSNELL, J
    FRAY, AF
    [J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (03) : 617 - +
  • [24] ANALYSIS OF THIN-FILMS ON GLASS BY NUCLEAR TECHNIQUES
    GOTTARDI, V
    RACCANELLI, A
    DELLAMEA, G
    DRIGO, AV
    LORUSSO, S
    MAZZOLDI, P
    KUSSTATSCHER, P
    [J]. GLASS TECHNOLOGY, 1976, 17 (01): : 26 - 30
  • [25] ADHESION MEASUREMENT OF THIN-FILMS ON GLASS SUBSTRATES
    KINBARA, A
    BABA, S
    KIKUCHI, A
    KAJIWARA, T
    WATANABE, K
    [J]. THIN SOLID FILMS, 1989, 171 (01) : 93 - 98
  • [26] EPITAXIAL FERROELECTRIC THIN-FILMS FOR MEMORY APPLICATIONS
    RAMESH, R
    SANDS, T
    KERAMIDAS, VG
    FORK, DK
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 22 (2-3): : 283 - 289
  • [27] POLARIZED MEMORY SWITCHING IN MIS THIN-FILMS
    BERNEDE, JC
    [J]. THIN SOLID FILMS, 1981, 81 (02) : 155 - 160
  • [28] MNOS MEMORY TECHNOLOGY WITH OXYNITRIDE THIN-FILMS
    KAPOOR, VJ
    TURI, RA
    XU, D
    BAILEY, RS
    [J]. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1994, 17 (03): : 367 - 372
  • [29] SWITCHING AND MEMORY PHENOMENA IN ANTHRACENE THIN-FILMS
    ELSHARKAWI, AR
    KAO, KC
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1977, 38 (01) : 95 - 96
  • [30] SWITCHING AND MEMORY CHARACTERISTICS OF ZNTE THIN-FILMS
    OTA, T
    TAKAHASHI, K
    MORIIZUMI, T
    [J]. SOLID-STATE ELECTRONICS, 1972, 15 (06) : 725 - +