MNOS MEMORY TECHNOLOGY WITH OXYNITRIDE THIN-FILMS

被引：3
|
作者：
KAPOOR, VJ [1 ]
TURI, RA [1 ]
XU, D [1 ]
BAILEY, RS [1 ]
机构：
[1] UNIV CINCINNATI,DEPT ELECT & COMP ENGN,CINCINNATI,OH 45221
来源：
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A | 1994年 / 17卷 / 03期
关键词：
D O I：
10.1109/95.311745
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Memory properties of a metal-oxynitride-oxide-silicon (MNOS) device were investigated as a function of amount of oxygen and hydrogen impurities in the oxynitride films. The retention and endurance device characteristics improved by 60% and 10(7) to 10(8) cycles, respectively, as 13% oxygen was introduced in the oxynitride film. The interface state density decreased from 5.1 to 3. 65 x 10(11) cm-2 eV-1, with an increase of approximately 21% oxygen in the oxynitride film, and further decreased to 2.1 x 10(11) cm2 eV6-1 after hydrogen annealing. The results indicate that the nonvolatile memory properties of MNOS devices can be altered and considerably improved by incorporating oxygen in the oxynitride film and selecting appropriate processing and annealing conditions.
引用
收藏
页码：367 / 372
页数：6
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