MASKLESS ETCHING OF AL USING FOCUSED ION-BEAM

被引：6
|
作者：
OCHIAI, Y
SHIHOYAMA, K
SHIOKAWA, T
TOYODA, K
MASUYAMA, A
GAMO, K
NAMBA, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 07期
关键词：
D O I：
10.1143/JJAP.25.L526
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L526 / L529
页数：4
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