MASKLESS ETCHING OF AL USING FOCUSED ION-BEAM

被引:6
|
作者
OCHIAI, Y
SHIHOYAMA, K
SHIOKAWA, T
TOYODA, K
MASUYAMA, A
GAMO, K
NAMBA, S
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D O I
10.1143/JJAP.25.L526
中图分类号
O59 [应用物理学];
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页码:L526 / L529
页数:4
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