SUB-MICRON SILICON EPITAXIAL-FILMS DEPOSITED AT LOW-TEMPERATURES

被引：3

作者：

ATKINSON, CJ

WRIGHT, GL

WHITE, SJ

GREENWOOD, JD

机构：

[1] GEC Research Lab, Hirst Research, Cent, Wembley, Engl, GEC Research Lab, Hirst Research Cent, Wembley, Engl

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 04期

关键词：

CRYSTALS - Epitaxial Growth - SEMICONDUCTING FILMS - Growth;

D O I：

10.1149/1.2113989

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Submicron silicon epitaxial films have been deposited at low temperatures using only wet chemical cleans for the substrate surface preparation. The layers have been assessed by crystallographic (RHEED) techniques coupled with the electrical measurement of Schottky barrier diodes and transistors fabricated in the layers. In addition, XPS studies of the substrate surface prior to the deposition are also reported. Good quality epitaxial films have been produced at deposition temperatures of 900 degree C and below.

引用

页码：936 / 938

页数：3

共 50 条

[31] MODEL FOR DOPANT INCORPORATION INTO SILICON EPITAXIAL-FILMS
REIF, R
SARASWAT, KC
KAMINS, TI
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1358 - 1358
[32] MODEL FOR DOPANT INCORPORATION INTO SILICON EPITAXIAL-FILMS
REIF, R
SARASWAT, KC
KAMINS, TI
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C135 - C135
[33] Sub-micron structures in YBCO by a selective epitaxial growth technique
Damen, CAJ
Kropman, BL
Blank, DHA
Rogalla, H
APPLIED SUPERCONDUCTIVITY 1995, VOLS. 1 AND 2: VOL 1: PLENARY TALKS AND HIGH CURRENT APPLICATIONS; VOL 2: SMALL SCALE APPLICATIONS, 1995, 148 : 859 - 862
[34] Thermal and electrical modeling of sub-micron silicon devices
Muscato, O.
Di Stefano, V.
COMMUNICATIONS IN APPLIED AND INDUSTRIAL MATHEMATICS, 2010, 1 (02) : 29 - 45
[35] FILTER STRUCTURE FOR SUB-MICRON FILTRATION FABRICATED IN SILICON
KITTILSLAND, G
STEMME, G
JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 641 - 644
[36] FORMATION OF DEVICE-GRADE EPITAXIAL SILICON FILMS AT EXTREMELY LOW-TEMPERATURES BY LOW-ENERGY BIAS SPUTTERING
OHMI, T
ICHIKAWA, T
IWABUCHI, H
SHIBATA, T
JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) : 4756 - 4766
[37] MODELING OF PROCESS SENSITIVITY OF SUB-MICRON SILICON MOSFETS
WILSON, CL
ROITMAN, P
MARCHIANDO, JF
BLUE, JL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C318 - C318
[38] Sub-micron texturing of silicon wafer with fiber laser
Farrokhi, Hamid
Zhou, Wei
Zheng, Hong Yu
Li, Zhongli
MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI, 2011, 7926
[39] Sub-micron silicon RF IC technologies: "An overview"
Lovelace, DK
Finol, JL
Durec, JC
1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, 1998, : 317 - 320
[40] FMR IN EPITAXIAL GARNET-FILMS ON PARAMAGNETIC SUBSTRATE AT LOW-TEMPERATURES
DANILOV, VV
LYFAR, DL
LYUBONKO, YV
NECHIPORUK, AY
RYABCHENKO, SM
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1989, 32 (04): : 48 - 53

← 1 2 3 4 5 →