Sub-micron silicon RF IC technologies: "An overview"

被引：0

作者：

Lovelace, DK ^{[1
]}

Finol, JL ^{[1
]}

Durec, JC ^{[1
]}

机构：

[1] Motorola Semicond Prod Sector, Tempe, AZ 85284 USA

来源：

1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM | 1998年

关键词：

D O I：

10.1109/RFIC.1998.682342

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon based semiconductors have become the standard active device technology of choice in today's cost and performance driven consumer wireless products. No longer is silicon technology confined to low frequency analog and digital processing functions. Silicon devices have now reached high frequency performance levels which allow them to be used almost exclusively in the RF section of many wireless communication circuits. This paper will deal with the issues involved in employing silicon IC technologies to low cost, low power, RF circuits.

引用

页码：317 / 320

页数：4

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