SUB-MICRON SILICON EPITAXIAL-FILMS DEPOSITED AT LOW-TEMPERATURES

被引：3

作者：

ATKINSON, CJ

WRIGHT, GL

WHITE, SJ

GREENWOOD, JD

机构：

[1] GEC Research Lab, Hirst Research, Cent, Wembley, Engl, GEC Research Lab, Hirst Research Cent, Wembley, Engl

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 04期

关键词：

CRYSTALS - Epitaxial Growth - SEMICONDUCTING FILMS - Growth;

D O I：

10.1149/1.2113989

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Submicron silicon epitaxial films have been deposited at low temperatures using only wet chemical cleans for the substrate surface preparation. The layers have been assessed by crystallographic (RHEED) techniques coupled with the electrical measurement of Schottky barrier diodes and transistors fabricated in the layers. In addition, XPS studies of the substrate surface prior to the deposition are also reported. Good quality epitaxial films have been produced at deposition temperatures of 900 degree C and below.

引用

页码：936 / 938

页数：3

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