MODELING OF PROCESS SENSITIVITY OF SUB-MICRON SILICON MOSFETS

被引：0
|
作者：
WILSON, CL [1 ]
ROITMAN, P [1 ]
MARCHIANDO, JF [1 ]
BLUE, JL [1 ]
机构：
[1] NBS,WASHINGTON,DC 20234
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C318 / C318
页数：1
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