Modeling of gate capacitance for deep sub-micron MOSFETs

被引：0
|
作者：
Dai Yuehua [1 ]
Chen Junning
Ke Daoming
Zhu Dezhi
Xu Chao
机构：
[1] Anhui Univ, Inst Elect Sci & Technol, Hefei 230039, Peoples R China
[2] Res Inst China Elect Technol Grp Corp, Hefei 230031, Peoples R China
来源：
CHINESE JOURNAL OF ELECTRONICS | 2007年 / 16卷 / 03期
关键词：
quantum mechanical effects; gate capacitance; inversion layer; polysilicon gate; POLYSILICON QUANTIZATION; MOS; VOLTAGE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With the scaling of MOSFET dimensions, the gate oxides become thinner. Due to the Quantum mechanical effects (QME's), the carrier distributions in the silicon substrate and polysilicon electrodes play more important role for the gate capacitance. Based on improved triangular potential well approximation and least-squares curve fit, a simplified analytical model combined the impact of quantum effects in inversion and polysilicon gate regions is proposed. The results of the model are compared and verified with the numerical simulation.
引用
收藏
页码：435 / 438
页数：4
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