MODELING OF THE LOW-FREQUENCY BASE RESISTANCE OF SINGLE BASE CONTACT BIPOLAR-TRANSISTORS

被引：9
|
作者：
SCHROTER, M
机构：
[1] Ruhr-University Bochum, D-4630, Bochum
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 08期
关键词：
D O I：
10.1109/16.144691
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The current and geometry dependence of the base resistance of single base contact (SBC) bipolar transistors is accurately modeled by extending the simple analytical formulas given in [1]. The results show that SBC transistors only seem to be useful if the ratio of emitter width b to emitter length l is larger than about 1/5. Of course, this limit depends on technology and circuit application.
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页码：1966 / 1968
页数：3
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