LOW-FREQUENCY NOISE IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS

被引：75
|
作者：
MARKUS, HAW
KLEINPENNING, TGM
机构：
[1] Eindhoven University of Technology, Department of Electrical Engineering
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 04期
关键词：
D O I：
10.1109/16.372077
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-frequency noise in polysilicon emitter bipolar transistors is investigated. Transistors with various geometries and various properties of the oxide layer at the monosilicon polysilicon interface are studied. The main 1/f noise source proved to be located in the oxide layer. This source causes both 1/f noise in the base current S-Ib and 1/f noise in the emitter series resistance S-re. The magnitude of the 1/f noise source depends on the properties of the oxide layer. The 1/f noise is ascribed to barrier height fluctuations of the oxide layer resulting in transparency fluctuations for both minority and majority carriers in the emitter, giving rise to S-Ib acid S-re respectively. It is also shown that a low transparency of the oxide layer also reduces the contribution of mobility fluctuations to S-Ib.
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收藏
页码：720 / 727
页数：8
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