Crowding effects and low frequency noise in polysilicon emitter bipolar transistors

被引：3
|
作者：
Routoure, JM
Lepaisant, J
Bloyet, D
Bardy, S
Lebailly, J
机构：
[1] Inst Sci Mat & Rayonnement, GREYC, UPRESA 6072, F-14050 Caen, France
[2] Philips Composants Caen, F-14000 Caen, France
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 05期
关键词：
D O I：
10.1016/S0038-1101(99)00008-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This note explores experimentally the limitations of the lumped parameter model of polysilicon emitter junction transistors (BJT) in low frequency noise (1/f noise) analysis. Deviations from the lumped model were clearly observed experimentally in BJT when determining the base current fluctuations resulting from minority carriers crossing the emitter monosilicon-polysilicon oxide layer. We apply a distributed model of the base access resistance taking into account crowding effects to explain our experimental results. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：931 / 936
页数：6
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