Crowding effects and low frequency noise in polysilicon emitter bipolar transistors

被引：3

作者：

Routoure, JM

Lepaisant, J

Bloyet, D

Bardy, S

Lebailly, J

机构：

[1] Inst Sci Mat & Rayonnement, GREYC, UPRESA 6072, F-14050 Caen, France

[2] Philips Composants Caen, F-14000 Caen, France

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 05期

关键词：

D O I：

10.1016/S0038-1101(99)00008-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This note explores experimentally the limitations of the lumped parameter model of polysilicon emitter junction transistors (BJT) in low frequency noise (1/f noise) analysis. Deviations from the lumped model were clearly observed experimentally in BJT when determining the base current fluctuations resulting from minority carriers crossing the emitter monosilicon-polysilicon oxide layer. We apply a distributed model of the base access resistance taking into account crowding effects to explain our experimental results. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：931 / 936

页数：6

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