Low-frequency noise in single-poly bipolar transistors at low base current density

被引：5
|
作者：
Valdaperez, N
Routoure, JM
Bloyet, D
Carin, R
Bardy, S
Lebailly, J
机构：
[1] Univ Caen, GREYC ISMRA, F-14050 Caen, France
[2] Philips Composants Caen, F-1400 Caen, France
来源：
MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 02期
关键词：
D O I：
10.1016/S0026-2714(00)00197-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper deals with the low-frequency noise of single-poly bipolar transistors (SBJT) biased at low base current density. From Gummel plots and low-frequency noise measurements per-formed on many SBJTs made using the same process, it is clearly demonstrated that the low-frequency noise is related to generation-recombination mechanisms (GR) that occur at the periphery of the emitter-base space charge region. A model which takes into account both the diffusion noise and the GR noise is proposed. A comparison with some measurements performed on another BiCMOS technology and with some results of the literature validates this analysis. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：265 / 271
页数：7
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