SIMULATION AND MODELING OF THE LOW-FREQUENCY BASE RESISTANCE OF BIPOLAR-TRANSISTORS AND ITS DEPENDENCE ON CURRENT AND GEOMETRY

被引：32

作者：

SCHROTER, M

机构：

[1] Ruhr-University Bochum

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 03期

关键词：

D O I：

10.1109/16.75164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current and geometry dependence of the low-frequency base resistance of high-speed bipolar transistors is investigated by means of quasi-three-dimensional numerical device simulations. It is shown that the total base resistance can be separated into a current-and geometry-dependent internal part and an only geometry-dependent external part. Both of these parts can be accurately approximated by simple analytical formulas which are well suited for compact transistor modeling. The investigations are based on sheet resistances and dimensions the values of which are typical for self-aligned double-poly-silicon technology.

引用

页码：538 / 544

页数：7

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