NEW METHOD TO DETERMINE THE BASE RESISTANCE OF BIPOLAR-TRANSISTORS

被引：17

作者：

WENG, J ^{[1
]}

HOLZ, J ^{[1
]}

MEISTER, TF ^{[1
]}

机构：

[1] UNIV REGENSBURG,DEPT PHYS,W-8400 REGENSBURG,GERMANY

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 03期

关键词：

D O I：

10.1109/55.144996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method to determine the base resistance of bipolar transistors under forward-bias conditions is presented. Using special transistor structures, the total base resistance R(Btot) has been directly measured and then separated into its components, external and internal base resistances, R(Bext) and R(Bint), respectively. The sheet resistance R(pi) for the internal base region can be estimated for a base-emitter voltage range of practical interest. Finally, an accurate estimation of the base resistance of advanced bipolar transistors under high forward-bias conditions is demonstrated.

引用

页码：158 / 160

页数：3

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