INCORPORATION OF DEEP CENTERS IN VPE GAAS

被引:6
|
作者
HUMBERT, A
HOLLAN, L
BOIS, D
机构
[1] LAB ELECTR, F-94450 LIMEIL, FRANCE
[2] LAB PHYS APPL, LIMEIL, FRANCE
来源
APPLIED PHYSICS | 1976年 / 9卷 / 02期
关键词
D O I
10.1007/BF00903947
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:117 / 119
页数:3
相关论文
共 50 条
  • [31] PHOTOLUMINESCENCE OF NITROGEN-DOPED VPE GAAS
    SCHWABE, R
    SEIFERT, W
    BUGGE, F
    BINDEMANN, R
    AGEKYAN, VF
    POGAREV, SV
    SOLID STATE COMMUNICATIONS, 1985, 55 (02) : 167 - 173
  • [32] EPR OF DEEP CENTERS IN CR-DOPED GAAS
    KREBS, JJ
    STAUSS, GH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (01): : 89 - 89
  • [33] DEEP CENTERS IN GAAS ASSOCIATED WITH INTRINSIC STRUCTURAL DEFECTS
    BOLTAKS, BI
    KOLOTOV, MN
    SKORYATINA, EA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (10): : 56 - 66
  • [34] INFLUENCE OF DISLOCATIONS ON THE DISTRIBUTION OF DEEP CENTERS IN SEMIINSULATING GAAS
    MARKOV, AV
    OMELYANOVSKII, EM
    OSVENSKII, VB
    POLYAKOV, AY
    KOVALCHUK, IA
    RAIKHSHTEIN, VI
    TISHKIN, MV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (01): : 27 - 30
  • [35] DISLOCATION RELATED INHOMOGENEITY OF DEEP CENTERS IN SI GAAS
    GOVORKOV, AV
    MARKOV, AV
    OMELJANOVSKY, EM
    POLYAKOV, AJ
    RAIHSTEIN, VI
    FRIDMAN, VA
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 145 - 148
  • [36] RECOMBINATION MECHANISMS AND PARAMETERS OF DEEP CENTERS IN COMPENSATED GAAS
    PEKA, GP
    BRODOVOI, VA
    ZERNOV, SL
    MIRETS, LZ
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01): : 47 - 52
  • [37] DEEP EMISSION CENTERS IN GE-IMPLANTED GAAS
    YU, PW
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7165 - 7167
  • [38] THERMODYNAMIC ANALYSIS FOR SILICON CONTAMINATION OF VPE GAAS
    SEKI, H
    KOUKITU, A
    SEKI, H
    FUJIMOTO, M
    JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 159 - 163
  • [39] Hydride VPE Growth of GaAs for FET's
    Stringfellow, G. B.
    Hom, G.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1806 - 1811
  • [40] ANISOTROPY IN SULFUR DOPING OF GAAS GROWN BY VPE
    GENTNER, JL
    JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 267 - 270