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- [5] THE PROBLEM OF DEEP CENTERS IN GAAS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (10): : 2 - 4
- [7] DISLOCATION REDUCTION IN HGCDTE ON GAAS AND SI JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1492 - 1498
- [8] DISLOCATION GENERATION AND ELIMINATION IN GAAS ON SI EVALUATION OF ADVANCED SEMICONDUCTOR MATERIALS BY ELECTRON MICROSCOPY, 1989, 203 : 335 - 346
- [9] RELATIONSHIP BETWEEN THE CONCENTRATION OF DEEP EL2 CENTERS AND DISLOCATION DENSITY IN SEMIINSULATING GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (09): : 1074 - 1075
- [10] CONTRIBUTION OF SMALL DEFECT CENTERS INTO ELECTRIC INHOMOGENEITY OF A SEMIISOLATING GAAS KRISTALLOGRAFIYA, 1991, 36 (05): : 1275 - 1279