共 50 条
- [25] Models for the Lomer dislocation core at the GaAs/Si interface MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 83 - 86
- [26] THREADING DISLOCATION DENSITY REDUCTION IN GAAS ON SI SUBSTRATES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2271 - L2273
- [27] Threading dislocation density reduction in GaAs on Si substrates Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (12): : 2271 - 2273
- [29] ELECTRONIC-STRUCTURE OF DEEP CENTERS IN GAAS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (10): : 45 - 55
- [30] FORMATION OF DEEP CENTERS IN GAAS BY LASER IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (02): : 226 - 227