DISLOCATION RELATED INHOMOGENEITY OF DEEP CENTERS IN SI GAAS

被引：0
|
作者：
GOVORKOV, AV
MARKOV, AV
OMELJANOVSKY, EM
POLYAKOV, AJ
RAIHSTEIN, VI
FRIDMAN, VA
机构：
来源：
SEMI-INSULATING III-V MATERIALS, MALMO 1988 | 1988年
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：145 / 148
页数：4
相关论文
共 50 条
  • [41] Influence of oxygen on the dislocation related luminescence centers in silicon
    Steinman, EA
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 6, 2005, 2 (06): : 1837 - 1841
  • [42] Threading dislocation reduction in GaAs films on thin Si substrates
    Maehashi, K
    Nakashima, H
    Bertram, F
    Veit, P
    Christen, J
    PHYSICA E, 1998, 2 (1-4): : 772 - 776
  • [43] Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
    Petrushkov, Mikhail O.
    Abramkin, Demid S.
    Emelyanov, Eugeny A.
    Putyato, Mikhail A.
    Komkov, Oleg S.
    Firsov, Dmitrii D.
    Vasev, Andrey V.
    Yesin, Mikhail Yu.
    Bakarov, Askhat K.
    Loshkarev, Ivan D.
    Gutakovskii, Anton K.
    Atuchin, Victor V.
    Preobrazhenskii, Valery V.
    NANOMATERIALS, 2022, 12 (24)
  • [44] Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers
    Abramkin D.S.
    Petrushkov M.O.
    Emel’yanov E.A.
    Putyato M.A.
    Semyagin B.R.
    Vasev A.V.
    Esin M.Y.
    Loshkarev I.D.
    Gutakovskii A.K.
    Preobrazhenskii V.V.
    Shamirzaev T.S.
    Optoelectronics, Instrumentation and Data Processing, 2018, 54 (2) : 181 - 186
  • [45] DISLOCATION REDUCTION BY IMPURITY DIFFUSION IN EPITAXIAL GAAS GROWN ON SI
    DEPPE, DG
    HOLONYAK, N
    HSIEH, KC
    NAM, DW
    PLANO, WE
    MATYI, RJ
    SHICHIJO, H
    APPLIED PHYSICS LETTERS, 1988, 52 (21) : 1812 - 1814
  • [46] DISLOCATION-DENSITY STUDIES ON EPITAXIAL GAAS ON SI SUBSTRATES
    MIZUKI, T
    SHIMIZU, M
    FURUKAWA, M
    SAKURAI, T
    SHARP TECHNICAL JOURNAL, 1988, (40): : 41 - 45
  • [47] THERMAL-STRESS AND DISLOCATION DENSITY IN UNDERCUT GAAS ON SI
    WADA, N
    SAKAI, S
    FUKUI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (02): : 976 - 985
  • [48] DISLOCATION-DENSITY STUDIES IN MOCVD GAAS ON SI SUBSTRATES
    SHIMIZU, M
    ENATSU, M
    FURUKAWA, M
    MIZUKI, T
    SAKURAI, T
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 475 - 480
  • [49] Effect of Ge interlayers on threading dislocation behavior in GaAs on Si
    Tamura, M
    Saitoh, T
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 535 - 540
  • [50] STRUCTURALLY SENSITIVE DEEP CENTERS IN LIGHTLY DOPED GAAS
    BOLSHEVA, YN
    VORONKOV, VV
    GLORIOZOVA, RI
    KOLESNIK, LI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 179 - 180
12345