共 50 条
- [1] CONTROL OF SULFUR DOPING FOR GAAS VPE LAYERSFUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1981, 17 (02): : 57 - 70KOMENO, JNOGAMI, MSHIBATOMI, A
- [2] CONTROL OF SULFUR DOPING FOR GaAs VPE LAYERS.Fujitsu Scientific and Technical Journal, 1981, 17 (02): : 57 - 70Komeno, JunjiNogami, MasaharuShibatomi, Akihiro
- [3] ISOELECTRONIC INDIUM DOPING OF GAAS AND ALGAAS GROWN BY OM-VPEJOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A25 - A25SILLMON, RSGASKILL, DKOVADIA, SBOTTKA, N
- [4] SULFUR INCORPORATION IN VPE GAASJOURNAL OF CRYSTAL GROWTH, 1981, 53 (03) : 598 - 604VEUHOFF, EMAIER, MBACHEM, KHBALK, P
- [5] ANISOTROPY IN THE DOPING CHARACTERISTICS OF DIMETHYLCADMIUM IN GAAS GROWN BY MOVPE ON (100) GAASJOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 329 - 332MATSUMOTO, KHIDAKA, JUCHIDA, K
- [6] RESIDUAL DOPING LEVEL IN VPE GAAS GROWN BY SINGLE FLAT TEMPERATURE ZONE METHODJAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 847 - 848SEKI, HKOUKITU, ASEKI, HFUJIMOTO, M
- [7] SIMS ANALYSIS OF IMPURITY PROFILES IN VPE GAAS GROWN BY SN DOPING PLUS MOLE FRACTION CONTROLJOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (06) : 744 - 744KIM, HBBARRETT, DL
- [8] GROWTH OF A GAAS VPE LAYER WITH AN ABRUPT DOPING PROFILEAPPLIED PHYSICS LETTERS, 1979, 35 (09) : 693 - 695KOMENO, JOHKAWA, S
- [9] METALORGANIC SULFUR SOURCES FOR THE DOPING OF GAAS GROWN BY CHEMICAL BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) : 31 - 35JOYCE, TBPFEFFER, TBULLOUGH, TJJONES, AC
- [10] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218DAVIES, GJANDREWS, DAHECKINGBOTTOM, R