ANISOTROPY IN SULFUR DOPING OF GAAS GROWN BY VPE

被引：5
|
作者：
GENTNER, JL
机构：
来源：
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期
关键词：
D O I：
10.1051/jphyscol:1982531
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：267 / 270
页数：4
相关论文
共 50 条
  • [41] INCORPORATION OF DEEP CENTERS IN VPE GAAS
    HUMBERT, A
    HOLLAN, L
    BOIS, D
    APPLIED PHYSICS, 1976, 9 (02): : 117 - 119
  • [42] IMPURITY BEHAVIOR IN VPE OF GaAs.
    Peng Rui-Wu
    Xi You Jin Shu/Rare Metals, 1985, 4 (03): : 7 - 10
  • [43] Diffusion Growth Model of Doping-impurity Longitudinal Profile in Grown Material by MOCVD and Chloride VPE
    Semiconductor Photonics and Technology, 1998, (03) : 13 - 19
  • [44] Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates
    Saka, T.
    Kato, T.
    Jin, X. G.
    Tanioku, M.
    Ujihara, T.
    Takeda, Y.
    Yamamoto, N.
    Nakagawa, Y.
    Mano, A.
    Okumi, S.
    Yamamoto, M.
    Nakanishi, T.
    Horinaka, H.
    Matsuyama, T.
    Yasue, T.
    Koshikawa, T.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (08): : 1785 - 1789
  • [45] Structural and magnetic anisotropy of epitaxially grown MnAs on GaAs(001)
    Schippan, F
    Trampert, A
    Behme, G
    Däweritz, L
    Ploog, KH
    Dennis, B
    Neumann, KU
    Ziebeck, KRA
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 79 - 82
  • [46] LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE
    HERSEE, S
    BALDY, M
    ASSENAT, P
    DECREMOUX, B
    DUCHEMIN, JP
    ELECTRONICS LETTERS, 1982, 18 (14) : 618 - 620
  • [47] ON THE CORRELATIONS BETWEEN ELECTRICAL-PROPERTIES AND GROWTH-CONDITIONS FOR VPE GAAS GROWN IN THE HYDRIDE SYSTEM
    DIEGNER, B
    KUGLER, J
    WEINERT, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 96 (01): : 345 - 351
  • [48] SI DOPING EFFICIENCY IN GAAS GROWN AT LOW-TEMPERATURES
    WINER, K
    KAWASHIMA, M
    HORIKOSHI, Y
    APPLIED PHYSICS LETTERS, 1991, 58 (24) : 2818 - 2820
  • [49] Exponential-doping GaAs NEA Photocathode grown by MBE
    Zhang Junju
    Zhang Yijun
    Du Yujie
    Li Biao
    Fu Xiaoqian
    Chang Benkang
    OPTOELECTRONIC DEVICES AND INTEGRATION III, 2010, 7847
  • [50] Mg-doping of GaAs thin films grown by MBE
    Limborco, H.
    Moreira, M. V. B.
    Matinaga, F. M.
    de Oliveira, A. G.
    Gonzalez, J. C.
    2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2016,
12345