ON THE CORRELATIONS BETWEEN ELECTRICAL-PROPERTIES AND GROWTH-CONDITIONS FOR VPE GAAS GROWN IN THE HYDRIDE SYSTEM

被引：7

作者：

DIEGNER, B ^{[1
]}

KUGLER, J ^{[1
]}

WEINERT, H ^{[1
]}

机构：

[1] HUMBOLDT UNIV,SEKT PHYS,BEREICH 5,DDR-1040 BERLIN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 96卷 / 01期

关键词：

D O I：

10.1002/pssa.2210960142

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：345 / 351

页数：7

共 50 条

[1] ELECTRICAL-PROPERTIES OF VPE GAAS GROWN BY THE SINGLE FLAT TEMPERATURE ZONE METHOD
KOUKITU, A
SEKI, H
FUJIMOTO, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) : 1747 - 1755
[2] THE EFFECT OF GROWTH-CONDITIONS ON THE ELECTRICAL-PROPERTIES OF ULTRATHIN OXIDES
MURALI, V
WU, AT
FRASER, DB
NULMAN, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C361 - C361
[3] EFFECTS OF GROWTH-CONDITIONS ON THE INCORPORATION OF DEEP LEVELS IN VPE GAAS
OZEKI, M
KOMENO, J
OHKAWA, S
[J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1979, 15 (03): : 83 - 98
[4] INFLUENCE OF GROWTH-CONDITIONS ON INCORPORATION OF DEEP LEVELS IN VPE GAAS
HUMBERT, A
HOLLAN, L
BOIS, D
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4137 - 4144
[5] INFLUENCE OF GROWTH-CONDITIONS ON THE STRUCTURAL, OPTICAL, AND ELECTRICAL-PROPERTIES OF ZNSE FILMS
PIRZER, M
LUXSTEINER, MC
BUCHER, E
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 54 (05): : 455 - 459
[6] RELATIONSHIP OF PROPERTIES OF MBE GROWN GAAS-LAYERS WITH GROWTH-CONDITIONS
DUNG, PT
LAZNICKA, M
PAJASOVA, L
[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1986, 36 (06) : 759 - +
[7] THE INFLUENCE OF GROWTH-CONDITIONS ON THE ELECTRICAL-PROPERTIES OF GAAS/AL0.30GA0.70ASP+/N HETEROJUNCTIONS
TISCHLER, MA
BARATTE, H
KUECH, TF
WANG, PJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 631 - 636
[8] OPTIMUM GROWTH-CONDITIONS OF GAAS(111)B LAYERS FOR GOOD ELECTRICAL-PROPERTIES BY MOLECULAR-BEAM EPITAXY
TSUTSUI, K
MIZUKAMI, H
ISHIYAMA, O
NAKAMURA, S
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (03): : 468 - 474
[9] EFFECTS OF GROWTH-CONDITIONS ON DEEP-LEVEL DEFECTS IN VPE AND LPE GAAS
LI, SS
WANG, WL
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 401 - 403
[10] EFFECT OF GROWTH-CONDITIONS ON STOICHIOMETRY IN MBE-GROWN GAAS
KOBAYASHI, K
KAMATA, N
FUJIMOTO, I
OKADA, M
SUZUKI, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 753 - 755

← 1 2 3 4 5 →