INFLUENCE OF GROWTH-CONDITIONS ON INCORPORATION OF DEEP LEVELS IN VPE GAAS

被引：32

作者：

HUMBERT, A

HOLLAN, L

BOIS, D

机构：

[1] LAB ELECT & PHYS APPL, F-94450 LIMEIL BREVANNES, FRANCE

[2] INST NATL SCI APPL LYON, PHYS MAT LAB, F-69621 VILLEURBANNE, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.323275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4137 / 4144

页数：8

共 50 条

[1] EFFECTS OF GROWTH-CONDITIONS ON THE INCORPORATION OF DEEP LEVELS IN VPE GAAS
OZEKI, M
KOMENO, J
OHKAWA, S
[J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1979, 15 (03): : 83 - 98
[2] EFFECTS OF THE GROWTH-CONDITIONS ON THE INCORPORATION OF DEEP LEVELS IN VAPOR-GROWN GAAS
OZEKI, M
KOMENO, J
SHIBATOMI, A
OHKAWA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4808 - 4813
[3] EFFECTS OF GROWTH-CONDITIONS ON DEEP-LEVEL DEFECTS IN VPE AND LPE GAAS
LI, SS
WANG, WL
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 401 - 403
[4] DEEP LEVELS AND GROWTH-CONDITIONS OF LPE GAAS CRYSTALS
OKUMURA, T
IKOMA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 459 - 466
[5] A CORRELATION BETWEEN CONCENTRATION OF DEEP LEVELS AND GROWTH-CONDITIONS FOR VPE-GAP
SEIFERT, W
JACOBS, K
PICKENHAIN, R
BIEHNE, G
[J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1985, 20 (05) : 625 - 633
[6] INFLUENCE OF GROWTH-CONDITIONS ON DEEP LEVELS IN MOLECULAR-BEAM EPITAXIAL GAAS
AMANO, C
SHIBUKAWA, A
ANDO, K
YAMAGUCHI, M
[J]. ELECTRONICS LETTERS, 1984, 20 (04) : 174 - 175
[7] INCORPORATION OF DEEP CENTERS IN VPE GAAS
HUMBERT, A
HOLLAN, L
BOIS, D
[J]. APPLIED PHYSICS, 1976, 9 (02): : 117 - 119
[8] INFLUENCE OF GROWTH-CONDITIONS ON TIN INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ALEXANDRE, F
RAISIN, C
ABDALLA, MI
BRENAC, A
MASSON, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4296 - 4304
[9] THE INFLUENCE OF GROWTH-CONDITIONS ON SELENIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ANDREWS, DA
KONG, MY
HECKINGBOTTOM, R
DAVIES, GJ
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 841 - 845
[10] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ANDREWS, DA
HECKINGBOTTOM, R
DAVIES, GJ
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4421 - 4425

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