ANISOTROPY IN SULFUR DOPING OF GAAS GROWN BY VPE

被引：5
|
作者：
GENTNER, JL
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来源：
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期
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D O I：
10.1051/jphyscol:1982531
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页码：267 / 270
页数：4
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