INCORPORATION OF DEEP CENTERS IN VPE GAAS

被引：6
|
作者：
HUMBERT, A
HOLLAN, L
BOIS, D
机构：
[1] LAB ELECTR, F-94450 LIMEIL, FRANCE
[2] LAB PHYS APPL, LIMEIL, FRANCE
来源：
APPLIED PHYSICS | 1976年 / 9卷 / 02期
关键词：
D O I：
10.1007/BF00903947
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：117 / 119
页数：3
相关论文
共 50 条
  • [21] ELECTRONIC-STRUCTURE OF DEEP CENTERS IN GAAS
    MASTEROV, VF
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (10): : 45 - 55
  • [22] FORMATION OF DEEP CENTERS IN GAAS BY LASER IRRADIATION
    DMITRIEV, AG
    DORIN, VA
    KARFUL, R
    POGARSKII, MA
    SHULGA, MI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (02): : 226 - 227
  • [23] CHARACTERIZATION OF INTERFACE REGION IN VPE GAAS
    SHIBATOMI, A
    YOKOYAMA, N
    ISHIKAWA, H
    DAZAI, K
    RYUZAN, O
    JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 240 - 243
  • [24] SOME INVESTIGATIONS OF VPE OF GAAS IN CHINA
    PENG, RW
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 350 - 361
  • [25] IMPURITY BEHAVIOR IN VPE OF GaAs.
    Peng Rui-Wu
    Xi You Jin Shu/Rare Metals, 1985, 4 (03): : 7 - 10
  • [26] INCORPORATION OF NITROGEN INTO GALLIUMARSENIDE GROWN BY CHLORIDE VPE
    SCHWETLICK, S
    SEIFERT, W
    BUTTER, E
    HORIG, W
    PICKENHAIN, R
    SCHWABE, R
    CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (08) : 999 - 1007
  • [27] STRUCTURALLY SENSITIVE DEEP CENTERS IN LIGHTLY DOPED GAAS
    BOLSHEVA, YN
    VORONKOV, VV
    GLORIOZOVA, RI
    KOLESNIK, LI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 179 - 180
  • [28] Switching diodes based on GaAs with deep impurity centers
    Khludkov, S. S.
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2009, 52 (02) : 212 - 216
  • [29] Switching diodes based on GaAs with deep impurity centers
    S. S. Khludkov
    Instruments and Experimental Techniques, 2009, 52 : 212 - 216
  • [30] FORMATION OF CENTERS WITH DEEP LEVELS AT THE GAS EPITAXY OF GAAS
    LAVRENTYEVA, LG
    VILISOVA, MD
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1986, 29 (05): : 3 - 13
12345