共 50 条
- [1] 1.3 MU-M INGAASP DCPBH MULTIQUANTUM-WELL LASERSELECTRONICS LETTERS, 1984, 20 (18) : 727 - 728DUTTA, NKNAPHOLTZ, SGYEN, RBROWN, RLSHEN, TMOLSSON, NACRAFT, DC
- [2] HIGH-POWER OPERATION OF MULTIQUANTUM-WELL DFB LASERS AT 1.3-MU-MELECTRONICS LETTERS, 1995, 31 (16) : 1344 - 1345CHEN, TRCHEN, PCUNGAR, JBARCHAIM, N
- [3] ENHANCED RELAXATION OSCILLATION FREQUENCY OF 1.3-MU-M STRAINED-LAYER MULTIQUANTUM-WELL LASERSIEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (06) : 690 - 693KITO, MOTSUKA, NISHINO, MFUJIHARA, KMATSUI, Y
- [4] CHARACTERISTICS OF 1.3-MU-M INGAASP LASERS USED AS PHOTODETECTORSJOURNAL OF LIGHTWAVE TECHNOLOGY, 1989, 7 (02) : 347 - 352VANDERZIEL, JP
- [5] 1.3 MU-M INGAASP/INP MULTIQUANTUM-WELL LASERS GROWN BY VAPOR-PHASE EPITAXYELECTRONICS LETTERS, 1983, 19 (17) : 700 - 701YANASE, TKATO, YMITO, IYAMAGUCHI, MNISHI, KKOBAYASHI, KLANG, R
- [6] 1.3-MU-M INGAASP/INP MULTIQUANTUM WELL BURIED HETEROSTRUCTURE LASERS GROWN BY CHEMICAL-BEAM EPITAXYAPPLIED PHYSICS LETTERS, 1991, 59 (24) : 3084 - 3086TSANG, WTCHOA, FSLOGAN, RATANBUNEK, TWU, MCCHEN, YKSERGENT, AMWECHT, KW
- [7] INGAASP (LAMBDA - 1.3 MU-M) DISTRIBUTED FEEDBACK MULTIQUANTUM WELL LASERSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : C174 - C174DUTTA, NKNAPHOLTZ, SGPICCIRILLI, ABPRZYBYLEK, G
- [8] ANOMALOUS POLARIZATION CHARACTERISTICS OF 1.3-MU-M INGAASP BURIED HETEROSTRUCTURE LASERSAPPLIED PHYSICS LETTERS, 1984, 44 (09) : 823 - 825CRAFT, DCDUTTA, NKWAGNER, WR
- [9] REDUCED TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP/INP N-TYPE MODULATION-DOPED STRAINED MULTIQUANTUM-WELL LASERSELECTRONICS LETTERS, 1995, 31 (10) : 809 - 811NAKAHARA, KUOMI, KTSUCHIYA, TNIWA, A
- [10] 1.3-mu m InGaAsP-InP n-type modulation-doped strained multiquantum-well lasersIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 166 - 172Nakahara, KUomi, KTsuchiya, TNiwa, AHaga, TTaniwatari, T