1.3-mu m InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers

被引：19

作者：

Nakahara, K ^{[1
]}

Uomi, K ^{[1
]}

Tsuchiya, T ^{[1
]}

Niwa, A ^{[1
]}

Haga, T ^{[1
]}

Taniwatari, T ^{[1
]}

机构：

[1] HITACHI LTD,FIBEROPT DIV,KOKUBUNJI,TOKYO 185,JAPAN

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 02期

关键词：

multiquantum-well lasers;

D O I：

10.1109/2944.605650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of n-type modulation doping to reduce the threshold current, the carrier lifetime, and the infernal loss in 1.3-mu m InGaAsP-InP strained multiquantum-well (MQW) lasers is experimentally demonstrated. The threshold current density, the carrier lifetime, and the internal loss were reduced by about 33% 36%, and 28%, respectively, as compared with an undoped MQW laser, Moreover, the turn-on delay time in the n-type modulation-doped MQW lasers with a low-leakage buried heterostructure was reduced by about 35%, These results confirm the suitability of this type of laser for use in the basic structure of a monolithic laser array used as a light source for high-density parallel optical interconnection.

引用

页码：166 / 172

页数：7

共 50 条

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Nakahara, K
Uomi, K
Haga, T
Taniwatari, T
Oishi, A
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (10) : 1297 - 1298
[2] REDUCED TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP/INP N-TYPE MODULATION-DOPED STRAINED MULTIQUANTUM-WELL LASERS
NAKAHARA, K
UOMI, K
TSUCHIYA, T
NIWA, A
[J]. ELECTRONICS LETTERS, 1995, 31 (10) : 809 - 811
[3] Doping-type dependence of turn-on delay time in 1.3-mu m InGaAsP-InP modulation-doped strained quantum-well lasers
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Ohtoshi, T
Uomi, K
Nakahara, K
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (03) : 328 - 330
[4] 1.3-μm InP-based n-type modulation-doped strained multiquantum-well lasers for high-density parallel optical interconnections
Nakahara, K
Tsuchiya, T
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[J]. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II, 1998, 3284 : 164 - 171
[5] 1Gbit/s zero-bias operation of 1.3μm InGaAsP n-type modulation-doped strained multiquantum well lasers
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[J]. ELECTRONICS LETTERS, 1998, 34 (16) : 1584 - 1585
[6] 1.3 MU-M INGAASP DCPBH MULTIQUANTUM-WELL LASERS
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[J]. ELECTRONICS LETTERS, 1984, 20 (18) : 727 - 728
[7] Study on high-temperature performances of 1.3-μm InGaAsP-InP strained multiquantum-well buried-heterostructure lasers
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[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (02) : 276 - 278
[8] 1.3 MU-M INGAASP/INP MULTIQUANTUM-WELL LASERS GROWN BY VAPOR-PHASE EPITAXY
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[J]. ELECTRONICS LETTERS, 1983, 19 (17) : 700 - 701
[9] FABRICATION AND LASING CHARACTERISTICS OF 1.3-MU-M INGAASP MULTIQUANTUM-WELL LASERS
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[10] Dependence of threshold current density, carrier lifetime and optical gain coefficient on donor concentration in 1.3 mu m n-type modulation-doped strained multiquantum well lasers
Nakahara, K
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[J]. ELECTRONICS LETTERS, 1996, 32 (13) : 1200 - 1202

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