REDUCED TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP/INP N-TYPE MODULATION-DOPED STRAINED MULTIQUANTUM-WELL LASERS

被引：6
|
作者：
NAKAHARA, K
UOMI, K
TSUCHIYA, T
NIWA, A
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185, 1-280, Higashi-koigakubo
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 10期
关键词：
MODULATION DOPING; SEMICONDUCTOR JUNCTION LASERS;
D O I：
10.1049/el:19950572
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reductions in carrier lifetime, threshold current, and thus turn-on delay time, due to n-type modulation doping, have been experimentally demonstrated in 1.31 mu m InGaAsP strained multiquantum well lasers for the first time.
引用
收藏
页码：809 / 811
页数：3
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