Dependence of threshold current density, carrier lifetime and optical gain coefficient on donor concentration in 1.3 mu m n-type modulation-doped strained multiquantum well lasers

被引：4
|
作者：
Nakahara, K
Uomi, K
Tsuchiya, T
Niwa, A
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185, 1-280, Higashi-koigakubo
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 13期
关键词：
semiconductor quantum wells; semiconductor junction lasers;
D O I：
10.1049/el:19960788
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dependence of lasing properties on the donor concentration is experimentally investigated for 1.3 mu m n-type modulation-doped (MD) strained multiquantum well (MQW) lasers. The threshold current density has a minimum at a donor concentration of 3 x 10(18) cm(-3); the carrier lifetime and the optical gain coefficient decrease with the donor concentration. The turn-on delay time of 100 ps can be expected at 85 degrees C when thp MD-MQW structure is applied to a low-leakage buried heterostructure laser.
引用
收藏
页码：1200 / 1202
页数：3
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