1.3-MU-M INGAASP/INP MULTIQUANTUM WELL BURIED HETEROSTRUCTURE LASERS GROWN BY CHEMICAL-BEAM EPITAXY

High performance InGaAsP/InP multiquantum well (MQW) buried heterostructure lasers emitting around 1.3-mu-m were prepared for the first time by chemical-beam epitaxy. At 20-degrees-C, continuous-wave (cw) threshold currents were 5-8 mA and quantum efficiencies were 0.35-0.45 mW/mA for 250-mu-m long lasers having one facet approximately 85% reflective coated. At 80-degrees-C, the cw threshold currents remained low, 23 mA, quantum efficiency stayed high, 0.22 mW/mA, and output power of approximately 10 mW was achieved. cw power output as high as 125 mW was achieved with 750-mu-m long lasers having AR-HR (approximately 5%-85%) coatings. Lasers with bulk active were also studied for comparison. Though they also have excellent device performance, in general, they are somewhat inferior to MQW lasers.