1.3-mu m InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers

被引：19

作者：

Nakahara, K ^{[1
]}

Uomi, K ^{[1
]}

Tsuchiya, T ^{[1
]}

Niwa, A ^{[1
]}

Haga, T ^{[1
]}

Taniwatari, T ^{[1
]}

机构：

[1] HITACHI LTD,FIBEROPT DIV,KOKUBUNJI,TOKYO 185,JAPAN

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 02期

关键词：

multiquantum-well lasers;

D O I：

10.1109/2944.605650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of n-type modulation doping to reduce the threshold current, the carrier lifetime, and the infernal loss in 1.3-mu m InGaAsP-InP strained multiquantum-well (MQW) lasers is experimentally demonstrated. The threshold current density, the carrier lifetime, and the internal loss were reduced by about 33% 36%, and 28%, respectively, as compared with an undoped MQW laser, Moreover, the turn-on delay time in the n-type modulation-doped MQW lasers with a low-leakage buried heterostructure was reduced by about 35%, These results confirm the suitability of this type of laser for use in the basic structure of a monolithic laser array used as a light source for high-density parallel optical interconnection.

引用

页码：166 / 172

页数：7

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