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- [2] FABRICATION AND LASING CHARACTERISTICS OF 1.3-MU-M INGAASP MULTIQUANTUM-WELL LASERS[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 28 - 31SASAI, YHASE, NOGURA, MKAJIWARA, T
- [3] RELIABILITY OF INGAASP/INP BURIED HETEROSTRUCTURE 1.3-MU-M LASERS[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1294 - 1301MIZUISHI, KSAWAI, MTODOROKI, STSUJI, SHIRAO, MNAKAMURA, M
- [4] INTERNAL OPTICAL LOSS MEASUREMENTS IN 1.3-MU-M INGAASP LASERS[J]. ELECTRONICS LETTERS, 1995, 31 (14) : 1157 - 1159SHTENGEL, GEACKERMAN, DA
- [5] LOW-THRESHOLD INGAASP RIDGE WAVEGUIDE LASERS AT 1.3-MU-M[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1312 - 1319KAMINOW, IPSTULZ, LWKO, JSDENTAI, AGNAHORY, REDEWINTER, JCHARTMAN, RL
- [6] ABSORPTION, EMISSION, AND GAIN SPECTRA OF 1.3-MU-M INGAASP QUATERNARY LASERS[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 941 - 946HENRY, CHLOGAN, RATEMKIN, HMERRITT, FR
- [7] DYNAMIC SPECTRA OF 1.3-MU-M INGAASP LASERS UNDER PSEUDORANDOM WORD MODULATION[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (02) : 277 - 282SHEN, TM
- [8] THE RESONANCE FREQUENCY-DEPENDENCE ON THE DOPING LEVEL OF 1.3-MU-M INGAASP LASERS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2190 - 2191SU, CBLANZISERA, VA
- [9] THERMAL-RESISTANCE OF 1.3-MU-M INGAASP VERTICAL-CAVITY LASERS[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1993, 6 (08) : 455 - 457SHIMIZU, MBABIC, DIDUDLEY, JJJIANG, WBBOWERS, JE
- [10] REDUCTION OF RELATIVE INTENSITY NOISE IN 1.3-MU-M INGAASP SEMICONDUCTOR-LASERS[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1400 - 1402HILL, POLSHANSKY, RSCHLAFER, JPOWAZINIK, W