LOW-THRESHOLD INGAASP RIDGE WAVEGUIDE LASERS AT 1.3-MU-M

被引：43
|
作者：
KAMINOW, IP
STULZ, LW
KO, JS
DENTAI, AG
NAHORY, RE
DEWINTER, JC
HARTMAN, RL
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 08期
关键词：
D O I：
10.1109/JQE.1983.1072028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1312 / 1319
页数：8
相关论文
共 50 条
  • [1] LOW-THRESHOLD INGAASP INP DISTRIBUTED-FEEDBACK LASERS EMITTING AT 1.3-MU-M AND 1.5-MU-M WAVELENGTH
    IMAI, H
    WAKAO, K
    TABUCHI, H
    TANAHASHI, T
    ISHIKAWA, H
    MORIMOTO, M
    [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1984, 1 (12): : 1287 - 1287
  • [2] MOVPE GROWTH OF STRAINED INASP/INGAASP QUANTUM-WELL STRUCTURES FOR LOW-THRESHOLD 1.3-MU-M LASERS
    YAMAMOTO, M
    YAMAMOTO, N
    NAKANO, J
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 554 - 561
  • [3] EXTREMELY LOW-THRESHOLD (0.56 MA) OPERATION IN 1.3-MU-M INGAASP/INP COMPRESSIVE-STRAINED-MQW LASERS
    UOMI, K
    TSUCHIYA, T
    KOMORI, M
    OKA, A
    SHINODA, K
    OISHI, A
    [J]. ELECTRONICS LETTERS, 1994, 30 (24) : 2037 - 2038
  • [4] HIGH-RELIABILITY LOW-THRESHOLD INGAASP RIDGE WAVE-GUIDE LASERS EMITTING AT 1.3 MU-M
    RASHID, AM
    MURISON, R
    HAYNES, J
    HENSHALL, GD
    STOCKTON, TE
    JANSSEN, A
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (01) : 25 - 29
  • [5] PLASMA-HYDROGENATED LOW-THRESHOLD WIDEBAND 1.3-MU-M BURIED RIDGE STRUCTURE LASER
    KAZMIERSKI, C
    THEYS, B
    ROSE, B
    MIRCEA, A
    JALIL, A
    CHEVALLIER, J
    [J]. ELECTRONICS LETTERS, 1989, 25 (21) : 1433 - 1435
  • [6] CHARACTERISTICS OF 1.3-MU-M INGAASP LASERS USED AS PHOTODETECTORS
    VANDERZIEL, JP
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1989, 7 (02) : 347 - 352
  • [7] LOW-THRESHOLD AND WIDE-BANDWIDTH 1.3-MU-M INGAASP BURIED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT CONFINEMENT LAYERS
    CHENG, WH
    SU, CB
    BUEHRING, KD
    URE, JW
    PERRACHIONE, D
    RENNER, D
    HESS, KL
    ZEHR, SW
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (03) : 155 - 157
  • [8] INFLUENCE OF HOT CARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD IN 1.3-MU-M INGAASP LASERS
    ETIENNE, B
    SHAH, J
    LEHENY, RF
    NAHORY, RE
    [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1018 - 1020
  • [9] RELIABILITY OF INGAASP/INP BURIED HETEROSTRUCTURE 1.3-MU-M LASERS
    MIZUISHI, K
    SAWAI, M
    TODOROKI, S
    TSUJI, S
    HIRAO, M
    NAKAMURA, M
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1294 - 1301
  • [10] INTERNAL OPTICAL LOSS MEASUREMENTS IN 1.3-MU-M INGAASP LASERS
    SHTENGEL, GE
    ACKERMAN, DA
    [J]. ELECTRONICS LETTERS, 1995, 31 (14) : 1157 - 1159
12345