EXTREMELY LOW-THRESHOLD (0.56 MA) OPERATION IN 1.3-MU-M INGAASP/INP COMPRESSIVE-STRAINED-MQW LASERS

被引：5
|
作者：
UOMI, K
TSUCHIYA, T
KOMORI, M
OKA, A
SHINODA, K
OISHI, A
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 24期
关键词：
SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS;
D O I：
10.1049/el:19941373
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A record low threshold current of O.56mA, as a long-wavelength laser, has been obtained in a 1.3 mu m InGaAsP/InP strained-MQW laser, at room temperaturs (25 degrees C), by optimising an active layer and by employing a short cavity with high-reflection coatings.
引用
收藏
页码：2037 / 2038
页数：2
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