1mA-threshold operation of 1.3 mu m tensile-strained GaInAsP/InP MQW lasers

被引：0
|
作者：
Yokouchi, N [1 ]
Yamanaka, N [1 ]
Iwai, N [1 ]
Kasukawa, A [1 ]
机构：
[1] FURUKAWA ELECT CORP LTD,YOKOHAMA R&D LABS,NISHI KU,YOKOHAMA,KANAGAWA 220,JAPAN
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：388 / 391
页数：4
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