LOW-THRESHOLD, HIGH-T0 INGAASP/INP 1.3-MU-M LASERS GROWN ON PARA-TYPE INP SUBSTRATES WITH A 3-MELT TECHNIQUE

被引：0

作者：

HASENBERG, TC ^{[1
]}

GARMIRE, E ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR LASER STUDIES,LOS ANGELES,CA 90089

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1858 / 1858

页数：1

共 50 条

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