MICROPROBE PHOTOLUMINESCENCE MEASUREMENT ON HETEROEPITAXIAL GAAS ON SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：2
|
作者：
KIM, HS [1 ]
LEE, C [1 ]
TAKAI, M [1 ]
NAMBA, S [1 ]
MIN, SK [1 ]
机构：
[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 52卷 / 03期
关键词：
D O I：
10.1007/BF00324416
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Microprobe photoluminescence (PL) measurements at 77K were used to study the effect of the GaAs layer thickness on optical quality and variations in strain in GaAs/Si containing microcracks. PL peak intensities increase with the increase in thickness of GaAs layers and the peak intensity for the 5.5-mu-m GaAs layer was a factor of 20 higher than those for the 1-2-mu-m GaAs layers. Spatial nonuniformities in strain in the vicinity of two microcracks reveal that stress was almost released at the intersection of two microcracks and is maximum half way between two microcracks.
引用
收藏
页码：188 / 191
页数：4
相关论文
共 50 条
  • [31] MATERIAL AND DEVICE PROPERTIES OF GAAS ON SAPPHIRE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KASAI, K
    NAKAI, K
    OZEKI, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 1 - 5
  • [32] REVERSE BIASED GAAS/ALGAAS PHASE MODULATOR GROWN ON SI SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIM, YS
    LEE, SS
    RAMASWAMY, RV
    [J]. FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A235 - A238
  • [33] MAGNETOPHOTOLUMINESCENCE CHARACTERIZATION OF RESIDUAL DONORS IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    WATKINS, SP
    HAACKE, G
    BURKHARD, H
    THEWALT, MLW
    CHARBONNEAU, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3205 - 3209
  • [34] ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    UWAI, K
    NAKAGOME, H
    TAKAHEI, K
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1010 - 1012
  • [35] ALGAAS-GAAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - A REVIEW
    DUPUIS, RD
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 213 - 222
  • [36] PHOTOLUMINESCENCE STUDY ON THE INTERFACE OF A GAAS/ALXGA1-XAS HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    AKIMOTO, K
    TAMAMURA, K
    OGAWA, J
    MORI, Y
    KOJIMA, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 460 - 464
  • [37] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    BONNEFOI, AR
    COLLINS, RT
    MCGILL, TC
    BURNHAM, RD
    PONCE, FA
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 285 - 287
  • [38] Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition
    Song, XW
    Qu, Y
    Li, M
    Gao, X
    Li, XQ
    Zhang, XD
    [J]. ELECTRO-OPTIC AND SECOND HARMONIC GENERATION MATERIALS, DEVICES, AND APPLICATIONS II, 1998, 3556 : 170 - 172
  • [39] REDUCTION OF STRESS IN GAAS WITH IN-DOPED GAAS INTERMEDIATE LAYER GROWN ON SI SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    YAMAICHI, E
    ONOZAWA, S
    UEDA, T
    YAMAGISHI, C
    AKIYAMA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12A): : 3808 - 3811
  • [40] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS ON SI FOR SOLAR-CELL APPLICATIONS
    VERNON, SM
    HAVEN, VE
    TOBIN, SP
    WOLFSON, RG
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 530 - 538
12345