MATERIAL AND DEVICE PROPERTIES OF GAAS ON SAPPHIRE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10
|
作者：
KASAI, K
NAKAI, K
OZEKI, M
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期
关键词：
D O I：
10.1063/1.337680
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1 / 5
页数：5
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