CHARACTERIZATION OF GAAS GROWN SIMULTANEOUSLY ON SILICON-ON-SAPPHIRE AND SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：0

作者：

FENG, MS

PAN, N

STILLMAN, GE

HOLONYAK, N

HSIEH, KC

MANASEVIT, HM

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801

[3] TRW,DIV APPL TECHNOL,REDONDO BEACH,CA 90278

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：S38 / S38

页数：1

共 50 条

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