GROWTH AND CHARACTERIZATION OF GAAS FILMS ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：0
|
作者：
DUPUIS, RD [1 ]
BEAN, JC [1 ]
BROWN, JM [1 ]
MACRANDER, AT [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：298 / 299
页数：2
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