METALORGANIC CHEMICAL VAPOR-DEPOSITION OF PBTE FILMS ON GAAS SUBSTRATES

被引：3

作者：

POLLARD, KT ^{[1
]}

ERBIL, A ^{[1
]}

SUDHARSANAN, R ^{[1
]}

PERKOWITZ, S ^{[1
]}

机构：

[1] EMORY UNIV,DEPT PHYS,ATLANTA,GA 30322

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 12期

关键词：

D O I：

10.1063/1.350421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

PbTe films on GaAs substrates were grown by metalorganic chemical vapor deposition for the first time, at substrate temperatures as low as 300-degrees-C. Films grown directly on GaAs below a substrate temperature of 400-degrees-C showed (111) orientation on (100) GaAs and (100) orientation on (111) GaAs. However, above 400-degrees-C on GaAs and on CdTe buffer layers, the films followed the orientation of GaAs and CdTe, respectively. Hall measurements showed n-type conductivity in PbTe films grown directly on GaAs regardless of the Te/Pb input gas ratio and substrate temperature. The conductivity type of PbTe films grown on CdTe buffer layers depended on the input gas ratio of Te/Pb. The resistivity measured by Hall measurement was higher than that determined from infrared data, suggesting microcracks in the films.

引用

页码：6136 / 6139

页数：4

共 50 条

[1] THE GROWTH OF GAAS ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C484 - C484
[2] CHARACTERIZATION OF GAAS FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
SWAMINATHAN, V
VANHAREN, DL
ZILKO, JL
LU, PY
SCHUMAKER, NE
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5349 - 5353
[3] LATERAL GROWTH ON (110)GAAS SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
OKAMOTO, K
FURUTA, M
YAMAGUCHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03): : L437 - L440
[4] GROWTH AND CHARACTERIZATION OF GAAS FILMS ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
BEAN, JC
BROWN, JM
MACRANDER, AT
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 298 - 299
[5] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS ON (111)B SUBSTRATES BY USING DIETHYLGALLIUMCHLORIDE
OKAMOTO, K
ITO, O
YAMAGUCHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (7A): : L820 - L822
[6] LATERAL GROWTH ON (111)B GAAS SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
YAMAGUCHI, K
OKAMOTO, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 94 (01) : 203 - 207
[7] GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
BEAN, JC
BROWN, JM
MACRANDER, AT
MILLER, RC
HOPKINS, LC
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 69 - 77
[8] GROWTH OF INSB ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BIEFELD, RM
HEBNER, GA
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) : 272 - 278
[9] METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF ZNTE ON GAAS
TOMPA, GS
SUMMERS, CJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 903 - 906
[10] REACTIVE CHEMICAL INTERMEDIATES IN METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS
KILLEEN, KP
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (15) : 1864 - 1866

← 1 2 3 4 5 →