CHARACTERIZATION OF GAAS GROWN SIMULTANEOUSLY ON SILICON-ON-SAPPHIRE AND SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：0
|
作者：
FENG, MS
PAN, N
STILLMAN, GE
HOLONYAK, N
HSIEH, KC
MANASEVIT, HM
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801
[3] TRW,DIV APPL TECHNOL,REDONDO BEACH,CA 90278
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：S38 / S38
页数：1
相关论文
共 50 条
  • [31] SI SUBSTRATE PREPARATION FOR GAAS SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    FUJITA, K
    SHIBA, Y
    YAMAMOTO, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 341 - 345
  • [32] CHARACTERIZATION OF MISMATCHED INAS-GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    YORK, PK
    KIELY, CJ
    FERNANDEZ, GE
    BAILLARGEON, JN
    COLEMAN, JJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 512 - 516
  • [33] HYDROGENATION EFFECT ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS EPILAYERS GROWN ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIM, EK
    CHO, HY
    KIM, Y
    KIM, HS
    KIM, MS
    MIN, SK
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (21) : 2405 - 2407
  • [34] CHARACTERIZATION OF METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GAAS ON SI BY MEANS OF X-RAY-SCATTERING RADIOGRAPHY
    SUZUKI, Y
    CHIKAURA, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1290 - 1294
  • [35] LATERAL GROWTH ON (110)GAAS SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OKAMOTO, K
    FURUTA, M
    YAMAGUCHI, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03): : L437 - L440
  • [36] THICKNESS DEPENDENCE OF MATERIAL QUALITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    PEARTON, SJ
    ABERNATHY, CR
    CARUSO, R
    VERNON, SM
    SHORT, KT
    BROWN, JM
    CHU, SNG
    STAVOLA, M
    HAVEN, VE
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 775 - 783
  • [37] PHOTOLUMINESCENCE STUDIES OF STRESS RELIEF IN SELECTIVELY GROWN GAAS ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    LINGUNIS, EH
    HAEGEL, NM
    KARAM, NH
    [J]. SOLID STATE COMMUNICATIONS, 1990, 76 (03) : 303 - 306
  • [38] ELECTRIC SUBBANDS IN SI-DELTA-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIM, TW
    KIM, Y
    KIM, MS
    KIM, EK
    MIN, SK
    [J]. SOLID STATE COMMUNICATIONS, 1992, 84 (12) : 1133 - 1136
  • [39] PHOTOLUMINESCENCE CHARACTERIZATION OF CUBIC SIC GROWN BY CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES
    BISHOP, SG
    FREITAS, JA
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 106 (01) : 38 - 46
  • [40] NEW MECHANISM FOR SI INCORPORATION IN GAAS-ON-SI HETEROEPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    NOZAKI, S
    MURRAY, JJ
    WU, AT
    GEORGE, T
    WEBER, ER
    UMENO, M
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1674 - 1676
12345