MICROPROBE PHOTOLUMINESCENCE MEASUREMENT ON HETEROEPITAXIAL GAAS ON SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：2
|
作者：
KIM, HS [1 ]
LEE, C [1 ]
TAKAI, M [1 ]
NAMBA, S [1 ]
MIN, SK [1 ]
机构：
[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 52卷 / 03期
关键词：
D O I：
10.1007/BF00324416
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Microprobe photoluminescence (PL) measurements at 77K were used to study the effect of the GaAs layer thickness on optical quality and variations in strain in GaAs/Si containing microcracks. PL peak intensities increase with the increase in thickness of GaAs layers and the peak intensity for the 5.5-mu-m GaAs layer was a factor of 20 higher than those for the 1-2-mu-m GaAs layers. Spatial nonuniformities in strain in the vicinity of two microcracks reveal that stress was almost released at the intersection of two microcracks and is maximum half way between two microcracks.
引用
收藏
页码：188 / 191
页数：4
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