HETEROEPITAXIAL GROWTH OF INP ON GAAS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：45
|
作者：
LEE, MK
WUU, DS
TUNG, HH
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期
关键词：
D O I：
10.1063/1.339321
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：3209 / 3211
页数：3
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