PREVENTION OF CMOS LATCH-UP BY GOLD DOPING

被引：25
|
作者：
DAWES, WR [1 ]
DERBENWICK, GF [1 ]
机构：
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期
关键词：
D O I：
10.1109/TNS.1976.4328618
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2027 / 2030
页数：4
相关论文
共 50 条
  • [21] CAREFUL DESIGN METHODS PREVENT CMOS LATCH-UP
    MANNONE, P
    EDN MAGAZINE-ELECTRICAL DESIGN NEWS, 1984, 29 (02): : 137 - &
  • [22] STATIC CMOS LATCH-UP CONSIDERATIONS IN HVIC DESIGN
    HUANG, Q
    AMARATUNGA, GAJ
    NARAYANAN, EMS
    MILNE, WI
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (02) : 613 - 616
  • [23] Nonstationary Single Event Latch-up in CMOS ICs
    Chumakov, Alexander, I
    Bobrovsky, Dmitry, V
    Pechenkin, Alexander A.
    Savchenkov, Dmitry, V
    Sorokoumov, Georgy S.
    2018 18TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2018, : 200 - 203
  • [24] LATCH-UP CONTROL IN CMOS INTEGRATED-CIRCUITS
    OCHOA, A
    DAWES, W
    ESTREICH, D
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) : 5065 - 5068
  • [25] ESD and latch-up reliability for nanometer CMOS technologies
    Duvvury, C
    Boselli, G
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 933 - 936
  • [26] Improvement of CMOS Latch-Up in Bootstrapping Circuit Application
    Tsai, Jung-Ruey
    Chang, Yi-Sheng
    Lin, Jui-Chang
    Bai, Shu-Ming
    Sheu, Gene
    Yang, Shao-Ming
    Wu, Chun-Hsien
    2014 INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2014,
  • [27] STRUCTURE TO PREVENT LATCH-UP OF CMOS DEVICES.
    Anon
    IBM technical disclosure bulletin, 1986, 28 (10):
  • [28] PREVENTING LATCH-UP IN CMOS LOGIC ICs.
    Nelmes, Guy
    New Electronics, 1987, 20 (02): : 65 - 66
  • [29] SUBSTRATE BIAS GENERATOR UTILIZING HOLE EXTRACTION FOR LATCH-UP PREVENTION OF CMOS CIRCUITRY.
    Anon
    IBM technical disclosure bulletin, 1986, 28 (10): : 4463 - 4464
  • [30] OPTICALLY INDUCED LATCH-UP AND OTHER EFFECTS IN CMOS UVEPROMS
    HINDS, DJ
    STOKOE, JCD
    ELECTRONICS LETTERS, 1985, 21 (13) : 553 - 554
12345