Nonstationary Single Event Latch-up in CMOS ICs

被引：2
|
作者：
Chumakov, Alexander, I [1 ,2 ]
Bobrovsky, Dmitry, V [1 ,2 ]
Pechenkin, Alexander A. [1 ,2 ]
Savchenkov, Dmitry, V [1 ,2 ]
Sorokoumov, Georgy S. [1 ,2 ]
机构：
[1] Specialized Elect Syst SPELS, Moscow, Russia
[2] Natl Res Nucl Univ NRNU MEPHI, Moscow, Russia
来源：
2018 18TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2018年
关键词：
single event latch-up; rail span collapse; transient effect; heavy ion;
D O I：
10.1109/RADECS45761.2018.9328678
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents experimental results about transient single event latch-up (SEL) in CMOS ICs. The rail span collapse is the main reason of nonstationary SELs. A decrease of the voltage applied to n-p-n-p structure can be caused an additional current both in SEL state and in IC dynamic mode.
引用
收藏
页码：200 / 203
页数：4
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