ION-IMPLANTATION AS A TOOL TO CONTROL PROPERTIES OF AMORPHOUS HYDROGENATED SILICON

被引：6
|
作者：
VAVILOV, VS
AKIMCHENKO, IP
KRASNOPEVTSEV, VV
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 01期
关键词：
D O I：
10.1002/pssa.2210940142
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：343 / 350
页数：8
相关论文
共 50 条
  • [1] Ion-implantation into amorphous hydrogenated carbon films
    Khan, RUA
    Anguita, JV
    Silva, SRP
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 276 (1-3) : 201 - 205
  • [2] THERMAL QUENCHING IN DOPED LPCVD AMORPHOUS-SILICON HYDROGENATED BY ION-IMPLANTATION
    PIETRUSZKO, SM
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 255 - 258
  • [3] RESISTIVITY CONTROL OF SPUTTERED AMORPHOUS-SILICON BY ION-IMPLANTATION
    MATSUMURA, H
    KUZUTA, N
    ISHIWARA, H
    FURUKAWA, S
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 133 - 138
  • [4] ION-IMPLANTATION IN AMORPHOUS-GERMANIUM AND SILICON
    SEKHAR, P
    JOSHI, MC
    NARASIMHAN, KL
    GUHA, S
    [J]. SOLID STATE COMMUNICATIONS, 1978, 26 (12) : 933 - 936
  • [5] THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON
    KALBITZER, S
    MULLER, G
    LECOMBER, PG
    SPEAR, WE
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (04): : 439 - 456
  • [6] PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION - THERMAL ANNEALING
    SPITZER, WG
    HUBLER, GK
    KENNEDY, TA
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 309 - 312
  • [7] SOME PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY HELIUM ION-IMPLANTATION
    BURAVLYOV, AV
    VYATKIN, AF
    EGOROV, VK
    KIREIKO, VV
    ZUEV, AP
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 642 - 646
  • [8] ION-IMPLANTATION OF NEON IN SILICON FOR PLANAR AMORPHOUS ISOLATION
    YASAITIS, JA
    [J]. ELECTRONICS LETTERS, 1978, 14 (15) : 460 - 462
  • [9] MODEL CORRECTION FOR FORMATION OF AMORPHOUS SILICON BY ION-IMPLANTATION
    DENNIS, JR
    HALE, EB
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 420 - 420
  • [10] DOPING OF AMORPHOUS-SILICON BY MANGANESE ION-IMPLANTATION
    DVURECHENSKII, AV
    RYAZANTSEV, IA
    DRAVIN, VA
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (02): : K133 - &
12345